Effect of Substrate-RF on Sub-200 nm Al0.7Sc0.3N Thin Films
Sc-doped aluminum nitride is emerging as a new piezoelectric material which can substitute undoped aluminum nitride (AlN) in radio-frequency MEMS applications, thanks to its demonstrated enhancement of the piezoelectric coefficients.Furthermore, the recent demonstration of the ferroelectric-switching capability of the material CABINET gives AlScN t